This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).Key FeaturesCombines III-As/P/N HEMTs with reliability and current status in single volumeIncludes AC/DC modelling and (sub)millimeter wave devices with reliability analysisCovers all theoretical and experimental aspects of HEMTsDiscusses AlGaN/GaN transistorsPresents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots